Professor Runwei Li joins our journal team

Name: Runwei Li

Title: Professor

Position: Editorial Board Member

Affiliation: Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, 1219 West Zhongguan Road, Zhenhai District, Ningbo, P. R. China, 315201

Research Interest: Flexible/Elastic Electronics; Magnetic and Electronic Materials; Stress and Strain Sensors; Elastic Conductors; New Memory; Magnetoresistive Materials; Structures and Devices; Multiferroic Materials; Resistive Random Access Memory Materials and Devices

Website: https://memdlen.nimte.ac.cn/view-7030.html

Publications(Scopus/WoS/Google scholar/etc.):

https://www.scopus.com/authid/detail.uri?authorId=7404724556

https://scholar.google.com/citations?user=WLIDXugAAAAJ&hl=zh-CN

Dr. Run-Wei Li’s research interests focus on flexible magnetic and electronic materials and devices for new storage and sensing technology, including flexible or elastic electronic materials and sensors, Resistive Random Access Memory (RRAM) materials, physics and devices, etc. He discovered the super large anisotropic magnetoresistance effect in manganese oxide and the room temperature conductance quantization effect in RRAM devices, and designed and developed elastic wires and electrodes, flexible magnetic sensors, elastic stress and strain sensors, etc. He published more than 300 papers, is the editor-in-chief of two books, and filed more than 270 granted invention patents.